EFFECT OF ION-BEAM-INDUCED DISORDER ON OPTICAL INTERBAND-TRANSITIONS IN SI AND GAAS

被引：3

作者：

BHATIA, KL ^{[1
]}

WILBERTZ, C ^{[1
]}

DERST, G ^{[1
]}

KALBITZER, S ^{[1
]}

机构：

[1] MAX PLANCK INST KERNPHYS,D-69029 HEIDELBERG,GERMANY

来源：

RADIATION EFFECTS AND DEFECTS IN SOLIDS | 1994年 / 128卷 / 04期

关键词：

OPTICAL REFLECTION; ION-INDUCED DAMAGE; INTERBAND TRANSITION; INDIRECT BAND GAP; MICROCRYSTALS; SI; GAAS; AMORPHIZATION;

D O I：

10.1080/10420159408221056

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

Optical reflection spectra and their derivatives of Ar+ ion (75 keV) bombarded single crystals of Si and GaAs, with fluence ranging from 5x10(11)-1x10(15) ions cm(-2), have been investigated in the spectral region of interband optical transitions. The effect of ion-beam induced disorder on the interband transitions in the two categories of semiconductors (direct/indirect band gap) have been found to be quite different. This dissimilarity may be due to the different optical response of the intermediate microcrystalline component formed by ion-bombardment during the course of crystalline-to-amorphous transformation.

引用

页码：341 / 355

页数：15

共 25 条

[1] MODEL DIELECTRIC-CONSTANTS OF GAP, GAAS, GASB, INP, INAS, AND INSB [J].