SIMPLE STRESS FORMULA FOR MULTILAYERED THIN-FILMS ON A THICK SUBSTRATE

[1] BRANTLEY WA, 1973, J APPL PHYS, V44, P535

[2] CALCULATED STRESSES IN MULTILAYERED HETEROEPITAXIAL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) : 2543 - 2547

[3] OLSEN GH, 1978, CRYSTAL GROWTH THEOR, V2, P9

[4] POPOV EP, 1977, MECHANICS MATERIALS, P3

[5] INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3171 - 3175

[6] ROLL K, 1976, J APPL PHYS, V47, P3224, DOI 10.1063/1.323119

[7] EFFECT OF A GAASXP1-X TRANSITION ZONE ON PERFECTION OF GAP CRYSTALS GROWN BY DEPOSITION ONTO GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3273 - &

[8] IMPROVEMENT IN OPERATION LIVES OF GAALAS VISIBLE LASERS BY INTRODUCING GAALAS BUFFER LAYERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 763 - 767

[1] BRANTLEY WA, 1973, J APPL PHYS, V44, P535

[2] CALCULATED STRESSES IN MULTILAYERED HETEROEPITAXIAL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (06) : 2543 - 2547

[3] OLSEN GH, 1978, CRYSTAL GROWTH THEOR, V2, P9

[4] POPOV EP, 1977, MECHANICS MATERIALS, P3

[5] INTERFACE STRESS OF ALXGA1-XAS-GAAS LAYER STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) : 3171 - 3175

[6] ROLL K, 1976, J APPL PHYS, V47, P3224, DOI 10.1063/1.323119

[7] EFFECT OF A GAASXP1-X TRANSITION ZONE ON PERFECTION OF GAP CRYSTALS GROWN BY DEPOSITION ONTO GAAS SUBSTRATES [J]. JOURNAL OF APPLIED PHYSICS, 1969, 40 (08) : 3273 - &

[8] IMPROVEMENT IN OPERATION LIVES OF GAALAS VISIBLE LASERS BY INTRODUCING GAALAS BUFFER LAYERS [J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (05) : 763 - 767