RAMAN-SCATTERING STUDIES OF MONOLAYER-THICKNESS OXIDE AND TELLURIUM-FILMS ON PBSNTE

被引：29

作者：

CAPE, JA ^{[1
]}

HALE, LG ^{[1
]}

TENNANT, WE ^{[1
]}

机构：

[1] ROCKWELL INT, CTR SCI, THOUSAND OAKS, CA 91360 USA

来源：

SURFACE SCIENCE | 1977年 / 62卷 / 02期

关键词：

D O I：

10.1016/0039-6028(77)90106-6

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：639 / 646

页数：8

共 8 条

[1] EFFECT OF OXYGEN ON THE ELECTRICAL PROPERTIES OF LEAD TELLURIDE FILMS [J].

BODE, DE ;

LEVINSTEIN, H .

PHYSICAL REVIEW, 1954, 96 (02) :259-265

[2] EFFECT OF OXYGEN ON EPITAXIAL PBTE, PBSE AND PBS FILMS [J].

EGERTON, RF ;

JUHASZ, C .

THIN SOLID FILMS, 1969, 4 (04) :239-+

[3]

GRANT RW, 1976, J VACUUM SCI TECHNOL, V13

[4] SURFACE INTERACTION OF H AND O2 ON THIN PBSE EPITAXIC FILMS [J].

MCLANE, G ;

ZEMEL, JN .

THIN SOLID FILMS, 1971, 7 (3-4) :229-+

[5] AN ELECTROLYTIC POLISH AND ETCH FOR LEAD TELLURIDE [J].

NORR, MK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1962, 109 (05) :433-434

[6] RAMAN SPECTRA AND LATTICE DYNAMICS OF TELLURIUM [J].

PINE, AS ;

DRESSELHAUS, G .

PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :356-+

[7] STUDY OF DIELECTRIC FUNCTION OF PBSNTE EPITAXIAL FILM BY FAR-INFRARED REFLECTIVITY [J].

TENNANT, WE ;

CAPE, JA .

PHYSICAL REVIEW B, 1976, 13 (06) :2540-2547

[8] RAMAN DETECTION OF TELLURIUM LAYERS ON SURFACES OF CDTE [J].

ZITTER, RN .

SURFACE SCIENCE, 1971, 28 (01) :335-&

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