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RAMAN-STUDY OF GEOMETRICAL DISORDER AT SEMICONDUCTORS SURFACES

被引：3
作者：
CARLES, R
RENUCCI, JB
ZWICK, A
RENUCCI, MA
机构：
来源：
JOURNAL DE PHYSIQUE | 1982年 / 43卷 / NC-9期
关键词：
D O I：
10.1051/jphyscol:1982970
中图分类号：
学科分类号：
摘要：
引用
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页码：363 / 366
页数：4
相关论文
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