GAINAS/GAAS STRAINED LAYER MQW ELECTROABSORPTION OPTICAL MODULATOR AND SELF-ELECTRO-OPTIC EFFECT DEVICE

被引：14

作者：

DOBBELAERE, W

KALEM, S

HUANG, D

UNLU, MS

MORKOC, H

机构：

[1] Univ of Illinois at, Urbana-Champaign, Urbana, IL, USA, Univ of Illinois at Urbana-Champaign, Urbana, IL, USA

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 05期

关键词：

D O I：

10.1049/el:19880200

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：295 / 297

页数：3

共 8 条

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[2] HIGH-FREQUENCY INGAAS/INP MULTIPLE-QUANTUM-WELL BURIED-MESA ELECTROABSORPTION OPTICAL MODULATOR [J].

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ELECTRONICS LETTERS, 1987, 23 (12) :621-622

[3] ELECTRIC-FIELD DEPENDENCE OF OPTICAL-ABSORPTION NEAR THE BAND-GAP OF QUANTUM-WELL STRUCTURES [J].

MILLER, DAB ;

CHEMLA, DS ;

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GOSSARD, AC ;

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WOOD, TH ;

BURRUS, CA .

PHYSICAL REVIEW B, 1985, 32 (02) :1043-1060

[4] THE QUANTUM WELL SELF-ELECTROOPTIC EFFECT DEVICE - OPTOELECTRONIC BISTABILITY AND OSCILLATION, AND SELF-LINEARIZED MODULATION [J].

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

WOOD, TH ;

BURRUS, CA ;

GOSSARD, AC ;

WIEGMANN, W .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1985, 21 (09) :1462-1476

[5]

PANKOVE JI, 1975, OPTICAL PROCESSES SE, P103

[6] ELECTROABSORPTION IN AN INGAAS/GAAS STRAINED-LAYER MULTIPLE QUANTUM-WELL STRUCTURE [J].

VANECK, TE ;

CHU, P ;

CHANG, WSC ;

WIEDER, HH .

APPLIED PHYSICS LETTERS, 1986, 49 (03) :135-136

[7] ANISOTROPIC ELECTROABSORPTION AND OPTICAL MODULATION IN INGAAS/INALAS MULTIPLE QUANTUM-WELL STRUCTURES [J].

WAKITA, K ;

KAWAMURA, Y ;

YOSHIKUNI, Y ;

ASAHI, H ;

UEHARA, S .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1986, 22 (09) :1831-1836

[8] HIGH-SPEED OPTICAL MODULATION WITH GAAS/GAALAS QUANTUM WELLS IN A P-I-N-DIODE STRUCTURE [J].

WOOD, TH ;

BURRUS, CA ;

MILLER, DAB ;

CHEMLA, DS ;

DAMEN, TC ;

GOSSARD, AC ;

WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1984, 44 (01) :16-18

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