共 17 条
[1]
BANDY S, 1981, APPL PHYS LETT, V38, P36
[2]
Bube R.H., 1960, PHOTOCONDUCTIVITY SO
[3]
SHORT CHANNEL GA0.47IN0.53AS/AL0.48IN0.52AS SELECTIVELY DOPED FIELD-EFFECT TRANSISTORS
[J].
ELECTRON DEVICE LETTERS,
1982, 3 (08)
:205-208
[4]
DEPLETION MODE MODULATION DOPED AL0.48IN0.52AS-GA0.47IN0.53AS HETEROJUNCTION FIELD-EFFECT TRANSISTORS
[J].
ELECTRON DEVICE LETTERS,
1982, 3 (06)
:152-155