INPLANE ALIGNED Y1BA2CU3O7-X TAPES ON METALLIC SUBSTRATE BY CHEMICAL-VAPOR-DEPOSITION TECHNIQUE

被引：13

作者：

YAMAGUCHI, T

IIJIMA, Y

HIRANO, N

NAGAYA, S

KOHNO, O

机构：

[1] FUJIKURA LTD,MAT RES LAB,DEPT SUPERCONDUCT RES,KOTO KU,TOKYO 135,JAPAN

[2] CHUBU ELECTR POWER CO,MIDORI KU,NAGOYA 459,AICHI,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1994年 / 33卷 / 11期

关键词：

YBCO THIN FILM; CVD PROCESS; METALLIC SUBSTRATE; INPLANE ALIGNMENT;

D O I：

10.1143/JJAP.33.6150

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In-plane aligned Y1Ba2Cu3O7-x thin-film tapes have been prepared by the chemical vapor deposition technique on a metallic substrate at 700 degrees C. For continuous deposition on a long substrate, tetrahydrofuran solution of Y, Ba and Cu beta-diketonate chelate was slowly introduced to a vaporizer with argon gas by a liquid flow controller. The generated gas, including source metals, was carried to a reactor with oxygen. The orientation-controlled Y1Ba2Cu3O7-x thin-film tapes could be obtained by this system on a Hastelloy C-276 substrate with an in-plane aligned yttrium-stabilized zirconia buffer layer. The critical temperature defined by zero resistance was 88.5 K and the critical current density at 77 K in 0 T was 2.74 x 10(4) A/cm(2).

引用

收藏

页码：6150 / 6156

页数：7

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