IMPACT IONIZATION MODELING USING SIMULATION OF HIGH-ENERGY TAIL DISTRIBUTIONS

被引：14

作者：

AHN, JG

YAO, CS

PARK, YJ

MIN, HS

DUTTON, RW

机构：

[1] STANFORD UNIV,CTR INTEGRATED SYST,STANFORD,CA 94305

[2] SEOUL NATL UNIV,INTERUNIV SEMICOND RES CTR,SEOUL 151742,SOUTH KOREA

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 09期

基金：

美国国家科学基金会;

关键词：

Discretization method - High energy tail distributions - Impact ionization modeling - Tail electron hydrodynamic equations;

D O I：

10.1109/55.311130

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A new model for the impact ionization using the tail electron density is proposed. A new hydrodynamic model is used to compute the tail carrier quantities. The discretization method and numerical procedures are explained. The model parameters are extracted from the space-dependent Monte Carlo simulations. The simulated results for an n+ - n- - n+ diode and a DILDD n-MOSFET are shown and give good agreement with Monte Carlo simulations and measurements, respectively.

引用

页码：348 / 350

页数：3

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