MICROSTRUCTURES OF CO/CR BILAYER FILMS EPITAXIALLY GROWN ON MGO SINGLE-CRYSTAL SUBSTRATES
被引:34
作者:
NAKAMURA, A
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h-index: 0
机构:Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
NAKAMURA, A
KOGUCHI, M
论文数: 0引用数: 0
h-index: 0
机构:Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
KOGUCHI, M
FUTAMOTO, M
论文数: 0引用数: 0
h-index: 0
机构:Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
FUTAMOTO, M
机构:
[1] Central Research Laboratory, Hitachi Ltd., Kokubunji, Tokyo
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
|
1995年
/
34卷
/
5A期
关键词:
CO;
CR;
MGO;
EPITAXIAL GROWTH;
BICRYSTAL;
SINGLE-CRYSTAL;
HIGH-RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;
MAGNETIC RECORDING MEDIA;
D O I:
10.1143/JJAP.34.2307
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Microstructures of Co/Cr bilayer films epitaxially grown on MgO (100) and (110) single-crystal substrates have been studied by high-resolution transmission electron microscopy. The bicrystalline Co layer formed on the MgO (100) substrate contains a number of (0001) stacking faults. The single-crystal Co layer formed on the MgO (110) substrate consists of slightly misoriented subgrains, grown on (211)-oriented Cr domains. Dislocations and lattice strain are observed at the Cr/MgO (110) interface. The misorientations and the defects are thought to be introduced to accommodate the large lattice mismatch of about -16% in the MgO [$($) over bar$$ 110] direction at the Cr/MgO (110) interface.