STRUCTURAL-PROPERTIES OF III-V ZINCBLENDE SEMICONDUCTORS UNDER PRESSURE

被引：210

作者：

FROYEN, S ^{[1
]}

COHEN, ML ^{[1
]}

机构：

[1] UNIV CALIF BERKELEY LAWRENCE BERKELEY LAB,DIV MAT & MOLEC RES,BERKELEY,CA 94720

来源：

PHYSICAL REVIEW B | 1983年 / 28卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.28.3258

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3258 / 3265

页数：8

共 36 条

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