INTERLAYER POTENTIAL IN 2H-MOS2

被引：3

作者：

GHOSH, PN

MAITI, CR

机构：

来源：

PHYSICAL REVIEW B | 1984年 / 29卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.29.4757

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：4757 / 4761

页数：5

共 20 条

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