RAPID THERMAL AND PULSED LASER ANNEALING OF BORON FLUORIDE-IMPLANTED SILICON

被引：45

作者：

NARAYAN, J

HOLLAND, OW

CHRISTIE, WH

WORTMAN, JJ

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1985年 / 57卷 / 08期

关键词：

D O I：

10.1063/1.335411

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2709 / 2716

页数：8

共 18 条

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[8] RAPID THERMAL ANNEALING OF ION-IMPLANTED SEMICONDUCTORS [J].

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[9]

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[10] SOLID-PHASE-EPITAXIAL GROWTH AND FORMATION OF METASTABLE ALLOYS IN ION-IMPLANTED SILICON [J].

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