EXCITON LOCALIZATION IN INXGA1-XAS/GAAS QUANTUM-WELLS OBSERVED BY TEMPERATURE-MODULATED PHOTOLUMINESCENCE

被引：11

作者：

GAL, M

XU, ZY

GREEN, F

USHER, BF

机构：

[1] CSIRO,DIV RADIOPHYS,EPPING,NSW 2121,AUSTRALIA

[2] TELECOM AUSTRALIA,RES LABS,CLAYTON,VIC 3168,AUSTRALIA

来源：

PHYSICAL REVIEW B | 1991年 / 43卷 / 02期

关键词：

D O I：

10.1103/PhysRevB.43.1546

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Temperature-modulated photoluminescence is used to study the recombination processes in In(x)Ga1-xAs/GaAs single and multiple quantum wells between 8 and 70 K. The measured spectra correspond to the temperature derivative of the photoluminescence signal. We have compared the experimental data with calculations based on the temperature-dependent localized and delocalized excition energy, density, and linewidth, and have found good agreement between theory and experiment. It is shown that temperature-modulated photoluminescence spectroscopy can be used to obtain the exciton binding and localization energies.

引用

页码：1546 / 1550

页数：5

共 21 条

[1]

Aspnes D. E., 1980, Handbook on semiconductors, vol.II. Optical properties of solids, P109

[2] LOW-TEMPERATURE EXCITON TRAPPING ON INTERFACE DEFECTS IN SEMICONDUCTOR QUANTUM WELLS [J].