THE FORMATION OF SILICON-CARBIDE FILMS FROM DISILANE DERIVATIVES

被引：5

作者：

HENGGE, E

ZECHMANN, A

HOFER, F

POLT, P

LUX, B

DANZINGER, M

HAUBNER, R

机构：

[1] GRAZ UNIV TECHNOL,ELECTRON MICROSCOPY RES INST,A-8010 GRAZ,AUSTRIA

[2] VIENNA UNIV TECHNOL,INST CHEM TECHNOL INORGAN MAT,A-1060 VIENNA,AUSTRIA

来源：

ADVANCED MATERIALS | 1994年 / 6卷 / 7-8期

关键词：

Silicon carbide;

D O I：

10.1002/adma.19940060713

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

The formation of silicon carbide films presents problems arising from the fact that the precursors employed are usually a mixture of compounds. It is demonstrated that high-quality silicon carbide films (see Figure) can be produced by chemical vapor deposition using easily available disilane derivatives as the precursor.

引用

页码：584 / 587

页数：4

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