Quantum Hall effect in the presence of an antidot potential

被引:3
作者
Lei, M [1 ]
Zhu, NJ [1 ]
Guo, H [1 ]
机构
[1] MCGILL UNIV,CTR PHYS MAT,MONTREAL,PQ H3A 2T8,CANADA
来源
PHYSICAL REVIEW B | 1995年 / 52卷 / 23期
关键词
D O I
10.1103/PhysRevB.52.16784
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
We have computed the Hall resistance of a four-probe quantum dot with an artificial impurity confined inside. As the size of the impurity is increased, transport behavior changes from the usual quantum Hall regime to a regime dominated by strong Aharonov-Bohm (AB) oscillations. We observe directly the formation and coupling of the edge states and their effects on the Hall resistance by varying a magnetic field. For a range of the impurity size, transport enters a crossover regime where quantum Hall and AB effects compete, and a peculiar symmetry between various transmission coefficients leads to a Hall plateau before the quantum Hall regime is reached. This symmetry can be explained based on a topological equivalence of the dominating transmission patterns when well-defined edge states are formed.
引用
收藏
页码:16784 / 16792
页数:9
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