PERFORMANCE AND ANALYSIS OF AMORPHOUS-SILICON P-I-N SOLAR-CELLS MADE BY CHEMICAL-VAPOR DEPOSITION FROM DISILANE

被引:7
作者
HEGEDUS, SS
ROCHELEAU, RE
BUCHANAN, W
BARON, BN
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10.1063/1.338836
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O59 [应用物理学];
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页码:381 / 389
页数:9
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共 28 条
[1]  
ACHIDA Y, 1984, JPN J APPL PHYS, V23, pL129
[2]   IMPURITY DOPING IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS HYDROGENATED SILICON FROM DISILANE [J].
ASHIDA, Y ;
MISHIMA, Y ;
HIROSE, M ;
OSAKA, Y .
JOURNAL OF APPLIED PHYSICS, 1984, 55 (06) :1425-1428
[3]  
CHU T, 1985, P MATER RES SOC, V49, P121
[4]   OPTICAL-ABSORPTION ABOVE THE OPTICAL GAP OF AMORPHOUS-SILICON HYDRIDE [J].
CODY, GD ;
BROOKS, BG ;
ABELES, B .
SOLAR ENERGY MATERIALS, 1982, 8 (1-3) :231-240
[5]  
DALAL V, 1981, J PHYS PARIS, V4, P491
[6]  
DALAL VL, 1982, 16TH P IEEE PHOT SPE, P1362
[7]  
DELAHOY A, COMMUNICATION
[8]  
DELAHOY AE, 1983, P SOC PHOTO-OPT INST, V407, P47, DOI 10.1117/12.935687
[9]  
DICK J, COMMUNICATION
[10]  
DICK J, 1984, SERI TR2112229 REP