ANNEALING BEHAVIOR OF OXYGEN-INDUCED RECOMBINATION CENTERS IN SILICON

被引：4

作者：

BORIMSKII, VV

GLINCHUK, KD

LITOVCHENKO, NM

SALNIK, ZA

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 80卷 / 01期

关键词：

D O I：

10.1002/pssa.2210800137

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：343 / 348

页数：6

共 14 条

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[5]

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[7] DECAY OF EXCESS CARRIERS IN THERMALLY TREATED OXYGEN-DOPED SILICON [J].

GLINCHUK, KD ;

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[10] INFLUENCE OF CARBON ON OXYGEN BEHAVIOR IN SILICON [J].

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