CHARACTERIZATION OF CU-IN-SE-TE SYSTEM IN THIN-FILMS GROWN BY THERMAL EVAPORATION

被引：21

作者：

DIAZ, R

LEON, M

RUEDA, F

机构：

[1] Departamento de Fisica Aplicada CXII, Universidad Autónoma de Madrid, 28049, Madrid

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1992年 / 10卷 / 02期

关键词：

D O I：

10.1116/1.578079

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The growth conditions of thin films of Cu-In-Se-Te system fabricated by thermal evaporation and their composition, structural, optical, and electrical properties have been studied. When analyzing the optical absorption coefficient of the films, several energy gap discrete values appear: 0.86 +/- 0.04, 0.95 +/- 0.05, 1.26 +/- 0.06, 1.51 +/- 0.02, and 1.71 +/- 0.03 eV. Resistivities and mobilities varying in the ranges of 10(-3) to 8 OMEGA cm and 0.2 to 28.6 cm2 V-1 s-1, respectively were found depending on growing conditions. The "as grown" samples were p type. The thermal treatments may change the type of conduction from p to n.

引用

页码：295 / 300

页数：6

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