ACTIVATION GAPS IN THE ENERGY-SPECTRUM AND INFLUENCE OF DISORDER UNDER FRACTIONAL QUANTUM HALL-EFFECT IN SILICON MOSFET

被引：11

作者：

KUKUSHKIN, IV

TIMOFEEV, VB

机构：

来源：

SURFACE SCIENCE | 1986年 / 170卷 / 1-2期

关键词：

D O I：

10.1016/0039-6028(86)90954-4

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：148 / 153

页数：6

共 14 条

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[7] ANOMALOUS QUANTUM HALL-EFFECT - AN INCOMPRESSIBLE QUANTUM FLUID WITH FRACTIONALLY CHARGED EXCITATIONS [J].

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[8]

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[10] OBSERVATION OF QUANTIZED HALL-EFFECT AND VANISHING RESISTANCE AT FRACTIONAL LANDAU-LEVEL OCCUPATION [J].

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