HETEROJUNCTION GAAS/GAALAS I-2 L-RING OSCILLATORS FABRICATED BY MBE

被引：6

作者：

NAROZNY, P ^{[1
]}

BENEKING, H ^{[1
]}

FISCHER, RJ ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,DEPT ELECT ENGN,COORDINATED SCI LAB,URBANA,IL 61801

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1986年 / 33卷 / 09期

关键词：

D O I：

10.1109/T-ED.1986.22652

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1238 / 1241

页数：4

共 9 条

[1] DOUBLE HETEROJUNCTION NPN GAAIAS GAAS BIPOLAR-TRANSISTOR [J].

BENEKING, H ;

SU, LM .

ELECTRONICS LETTERS, 1982, 18 (01) :25-26

[2]

CHANG MF, 1985, UNPUB IEEE ELECTRON

[3] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[4] FABRICATION AND CHARACTERISTICS OF ION-IMPLANTED GAAS/GAALAS INTEGRATED INJECTION LOGIC INVERTER [J].

NAROZNY, P ;

BENEKING, H .

ELECTRONICS LETTERS, 1984, 20 (11) :442-443

[5]

NAROZNY P, 1985, ELECTRON LETT, V8, P328

[6] DOUBLE HETEROJUNCTION GAAS/ALXGA1-XAS BIPOLAR-TRANSISTORS PREPARED BY MOLECULAR-BEAM EPITAXY [J].

SU, SL ;

FISCHER, R ;

LYONS, WG ;

TEJAYADI, O ;

ARNOLD, D ;

KLEM, J ;

MORKOC, H .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (11) :6725-6731

[7]

TIWARI S, 1985, DIG GAAS IC S, P95

[8]

YUAN H, 1984, IEEE ISSCC 84, P42

[9]

YUAN HT, COMMUNICATION

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