VOID FORMATION IN ANNEALED N+-IMPLANTED ZNSE

被引:3
作者
VERMAAK, JS
PETRUZZELLO, J
机构
关键词
D O I
10.1063/1.333165
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:1215 / 1217
页数:3
相关论文
共 7 条
[1]   COMPARATIVE-STUDY OF ANNEALED NEON-ION, ARGON-ION, AND KRYPTON-ION IMPLANTATION DAMAGE IN SILICON [J].
CULLIS, AG ;
SEIDEL, TE ;
MEEK, RL .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5188-5198
[2]  
GIBBONS JF, 1975, PROJECTED RANGE STAT
[3]  
NELSON RS, 1975, PHYSICS IRRADIATION
[4]  
ROTH J, 1975, I PHYS C SER, V28, P280
[5]   VOID FORMATION IN ANNEALED PROTON-BOMBARDED GAAS [J].
SNYMAN, HC ;
NEETHLING, JH ;
VERMAAK, JS .
APPLIED PHYSICS LETTERS, 1981, 39 (03) :243-245
[6]   TRANSMISSION ELECTRON-MICROSCOPY OF EXTENDED CRYSTAL DEFECTS IN PROTON BOMBARDED AND ANNEALED GAAS [J].
SNYMAN, HC ;
NEETHLING, JH .
RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1983, 69 (3-4) :199-230
[7]  
VERMAAK JS, 1975, P SAEMS, V5, P119