INFLUENCE OF 2-PHOTON ABSORPTION ON 2ND-HARMONIC GENERATION IN SEMICONDUCTORS .2. MEASUREMENT OF 2-PHOTON ABSORPTION IN TELLURIUM

被引：6

作者：

OUDAR, JL ^{[1
]}

SCHWARTZ, CA ^{[1
]}

BATIFOL, EM ^{[1
]}

机构：

[1] CTR NATL ETUD TELECOMMUN,92220 BAGNEUX,FRANCE

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1975年 / 11卷 / 08期

关键词：

D O I：

10.1109/JQE.1975.1068769

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：623 / 629

页数：7

共 10 条

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[4]

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[5] 2-PHOTON ABSORPTION IN INDIUM-ANTIMONIDE AT 10.6 MUM [J].

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[7] 2-PHOTON ABSORPTION OF ND LASER RADIATION IN GAAS [J].

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APPLIED PHYSICS LETTERS, 1973, 23 (05) :243-244

[8] 2-PHOTON ABSORPTION AND PHOTOCONDUCTIVITY IN GAAS AND INP [J].

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[9] INFRARED OPTICAL PROPERTIES OF SINGLE CRYSTALS OF TELLURIUM [J].

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[10] MULTI-PHOTON ABSORPTION IN TELLURIUM BY IRRADIATION OF CO2-LASER PULSES [J].

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PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 1973, 58 (01) :K35-K38

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