RELAXED-LATTICE MODEL OF ISOLATED AND PAIRED ISOELECTRONIC TRAPS IN GAP

被引：16

作者：

SHEN, J

REN, SY

DOW, JD

机构：

[1] Department of Physics, University of Notre Dame, Notre Dame

来源：

PHYSICAL REVIEW B | 1990年 / 42卷 / 14期

关键词：

D O I：

10.1103/PhysRevB.42.9119

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A simple model of isolated and paired isoelectronic substitutional traps in GaP is presented that successfully explains the anomalous monotonic-in-n ordering of the nth nearest-neighbor (NN)n-pair levels, with pair energies that vary as the inverse cube of the N-N separation. The model is a multiband deep-level theory that includes the effects of lattice relaxation around the impurities. It is predicted that (Bi,Bi)n pairs will not exhibit the monotonic-in-n ordering of NNn pairs, that (Bi,Bi)1 and (Bi,Bi)2 will be resonant with the valence band, and that hydrostatic pressure can drive the Bi trap into the valence band. © 1990 The American Physical Society.

引用

页码：9119 / 9126

页数：8

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