PHOTOVOLTAIC ARRAY GAAS CELLS RESPONSE DRIVEN BY HIGH-POWER LASER-DIODES

被引:11
作者
LANDRY, MJ [1 ]
RUPERT, JW [1 ]
MITTAS, A [1 ]
机构
[1] SANDIA NATL LABS,DIV 2364,ALBUQUERQUE,NM 87185
来源
SOLAR CELLS | 1990年 / 29卷 / 04期
关键词
D O I
10.1016/0379-6787(90)90002-M
中图分类号
TE [石油、天然气工业]; TK [能源与动力工程];
学科分类号
0807 ; 0820 ;
摘要
Sandia National Laboratories is actively pursuing the safety of firing sets by replacing metal conducting paths with dielectric optical conductors. In this proposed application, the photovoltaic array (PVA) GaAs solar cells are illuminated by high power GaA1As laser diodes, which have been coupled to fiber optics in order to increase incident beam uniformity. Solar cells manufactured by Applied Solar Energy Corporation (ASEC) are rated at 1, 2, 10 and 16 V and those by Varian (assembled at Sandia National Laboratories) (V/SNL) are 2 V. The ASEC cell rated at 1 V is the most efficient (49%) at low incident optical power, followed by efficiency as low as 18% for the ASEC cell rated at 16 V. The narrower range of optimum resistance (1.1 -9.3 ohms) of the lower voltage cells causes small tolerance for matching the cells to external loads with the tolerance becoming smaller with increasing input optical power. For applications requiring high voltage (kilovolts) with large input optical power, the V/SNL solar cell rated at 2V is the best choice, since it generates the most power (0.7 W), is the most efficient (46%) and has large optimum cell resistance (5.9 ohms). The proper optical filling of the cell, uniform illumination of series connected cells and using matched segments in series connected cells are critical. © 1990.
引用
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页码:283 / 301
页数:19
相关论文
共 19 条
[1]  
BORDEN PG, 1979, APPL PHYS LETT, V35, P553, DOI 10.1063/1.91176
[2]  
COCKRUM RH, 1988, NASA TECH BRIEFS APR, P19
[3]   PHOTOVOLTAIC CONCENTRATOR CELL MEASUREMENT METHODS [J].
GEE, JM ;
HANSEN, BR .
SOLAR CELLS, 1986, 18 (3-4) :281-288
[4]  
GEE JM, COMMUNICATION
[5]   26-PERCENT EFFICIENT MAGNESIUM-DOPED ALGAAS/GAAS SOLAR CONCENTRATOR CELLS [J].
HAMAKER, HC ;
FORD, CW ;
WERTHEN, JG ;
VIRSHUP, GF ;
KAMINAR, NR ;
KING, DL ;
GEE, JM .
APPLIED PHYSICS LETTERS, 1985, 47 (07) :762-764
[6]  
HOVEL HJ, 1975, SEMICONDUCTOR SEMIME, V11, P70
[7]  
LANDRY MJ, 1989, SAND870912
[8]  
LANDRY MJ, IN PRESS EVALUATION
[9]  
LANDRY MJ, 1988, 1988 ANN M OPT SOC A
[10]  
MACMILLAN HF, 1988, 20TH P IEEE PHOT SPE