IMPROVED HYDRODYNAMICAL MODEL FOR CARRIER TRANSPORT IN SEMICONDUCTORS

被引：116

作者：

ANILE, AM

MUSCATO, O

机构：

[1] Dipartimento di Matematica, Università di Catania, 95125 Catania

来源：

PHYSICAL REVIEW B | 1995年 / 51卷 / 23期

关键词：

D O I：

10.1103/PhysRevB.51.16728

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A set of closed hydrodynamiclike equations is derived from Boltzmann's transport equation (BTE) describing charge transport in semiconductors. The production terms are modeled as relaxation terms consistently with the Onsager reciprocity principle. Stationary and homogeneous solutions are explicitly treated. The form of the production terms is checked by applying the Grad method of moments to the BTE. Finally the model is compared with Monte Carlo simulations for silicon. © 1995 The American Physical Society.

引用

页码：16728 / 16740

页数：13

共 33 条

[1] THERMODYNAMIC DERIVATION OF THE HYDRODYNAMICAL MODEL FOR CHARGE TRANSPORT IN SEMICONDUCTORS [J].