INFLUENCE OF DUV EXCIMER LASER-RADIATION (LAMBDA=193 NM) ON CMOS DEVICES

被引:3
作者
EDEN, K [1 ]
BENEKING, H [1 ]
ROTH, W [1 ]
机构
[1] EL MOS GMBH, D-4600 DORTMUND, FED REP GER
关键词
D O I
10.1016/0169-4332(89)90938-0
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:421 / 431
页数:11
相关论文
共 13 条
[1]   1 MU-M MOSFET VLSI TECHNOLOGY .8. RADIATION EFFECTS [J].
AITKEN, JM .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1979, 14 (02) :294-301
[2]   RADIATION EFFECTS OF E-BEAM FABRICATED SUB-MICRON NMOS TRANSISTORS [J].
CHEN, JY ;
HENDERSON, RC ;
PATTERSON, DO ;
MARTIN, R .
ELECTRON DEVICE LETTERS, 1982, 3 (01) :13-15
[4]   X-RAY-DAMAGE CONSIDERATIONS IN MOSFET DEVICES [J].
MALDONADO, JR ;
REISMAN, A ;
LEZEC, H ;
WILLIAMS, CK ;
IYER, SS .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1986, 133 (03) :628-631
[5]  
MULLER RS, 1986, DEVICE ELECT INTEGRA, P399
[6]  
NICOLLIAN EH, 1982, MOS PHYSICS TECHNOLO, P577
[7]   RADIATION-INDUCED INTERFACE TRAPS IN MO/SIO2/SI CAPACITORS [J].
NISHIOKA, Y ;
DASILVA, EF ;
MA, TP .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1987, 34 (06) :1166-1171
[8]  
ONG DG, 1986, MODERN MOS TECHNOLOG, pCH4
[9]   INFLUENCE OF ELECTRON LITHOGRAPHY ON ELECTRICAL PARAMETERS OF MOS STRUCTURES [J].
OSVALD, J .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1985, 90 (02) :K225-K227
[10]   ELECTRON-BEAM INDUCED DAMAGE IN POLY-SI GATE MOS STRUCTURES AND ITS EFFECT ON LONG-TERM STABILITY [J].
SHIMAYA, M ;
SHIONO, N ;
NAKAJIMA, O ;
HASHIMOTO, C ;
SAKAKIBARA, Y .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1983, 130 (04) :945-950