ELECTRON-PARAMAGNETIC-RES STUDIES OF THE ANNEALING OF DAMAGE PRODUCED BY BORON IMPLANTATION OF SILICON SINGLE-CRYSTALS

被引：1

作者：

GREGORKIEWICZ, T

机构：

来源：

RADIATION EFFECTS LETTERS | 1982年 / 68卷 / 02期

关键词：

D O I：

10.1080/01422448208226911

中图分类号：

TL [原子能技术]; O571 [原子核物理学];

学科分类号：

0827 ; 082701 ;

摘要：

SEMICONDUCTING SILICON - ION IMPLANTATION

引用

页码：69 / 76

页数：8

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