LIMITATIONS OF SELECTIVE EPITAXIAL-GROWTH CONDITIONS IN GAS-SOURCE MBE USING SI2H6

被引：18

作者：

AKETAGAWA, K ^{[1
]}

TATSUMI, T ^{[1
]}

SAKAI, J ^{[1
]}

机构：

[1] NEC CORP LTD,MICROELECTR LABS,KAWASAKI,KANAGAWA 213,JAPAN

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91097-T

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

The limiting conditions of selective epitaxial growth (SEG) on SiO2 patterned Si(001) substrate were studied for Si gas-source molecular beam epitaxy (MBE) by use of 100% Si2H6. In the initial stage of growth, epitaxial Si was selectively grown on a Si surface in the temperature range of 500 to 850-degrees-C. On the other hand, polycrystalline Si nucleation on a SiO2 surface was intimately related to the impinging density of the Si2H6 molecules on SiO2, so that SEG was limited by the supply gas volume. Under optimum SEG conditions such as substrate temperature of 700-degrees-C and Si2H6 flow rate of 60 SCCM, a SEG layer could be deposited at a rate as high as 645 angstrom/min.

引用

页码：860 / 863

页数：4

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