DIRECT EVIDENCE FOR BETA-HYDRIDE ELIMINATION ON SI(100)

被引:34
作者
KEELING, LA
CHEN, L
GREENLIEF, CM
MAHAJAN, A
BONSER, D
机构
[1] UNIV MISSOURI,DEPT CHEM,COLUMBIA,MO 65211
[2] UNIV TEXAS,SCI & TECHNOL CTR SYNTH GROWTH & ANAL ELECTR MAT,AUSTIN,TX 78712
基金
美国国家科学基金会;
关键词
D O I
10.1016/0009-2614(93)E1355-K
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
The adsorption and decomposition of ethylbromide on Si(100)-(2X1) is investigated as a way of generating surface ethyl groups. The interactions of ethylbromide with Si are explored by a variety of methods including ultraviolet photoelectron spectroscopy, temperature-programmed desorption and high-resolution electron energy loss spectroscopy. Ethylbromide adsorbs molecularly on Si(100) at a surface temperature of 110 K. The C-Br bond cleaves by warming the surface to temperatures greater than 200 K. The resulting ethyl groups decompose at surface temperatures greater than 500 K to yield ethylene and molecular hydrogen. Deuterium labelling of the ethyl group is used to verify that the predominant pathway to ethylene production is through a beta-hydride elimination step.
引用
收藏
页码:136 / 141
页数:6
相关论文
共 35 条
[1]   SURFACE ORGANOMETALLIC CHEMISTRY IN THE CHEMICAL VAPOR-DEPOSITION OF ALUMINUM FILMS USING TRIISOBUTYLALUMINUM - BETA-HYDRIDE AND BETA-ALKYL ELIMINATION-REACTIONS OF SURFACE ALKYL INTERMEDIATES [J].
BENT, BE ;
NUZZO, RG ;
DUBOIS, LH .
JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1989, 111 (05) :1634-1644
[2]   SURFACE CHEMICAL-REACTIONS IN THE METAL ORGANIC-CHEMICAL VAPOR-DEPOSITION OF ALUMINUM FILMS [J].
BENT, BE ;
NUZZO, RG ;
DUBOIS, LH .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (03) :1920-1922
[3]   ADSORPTION AND DESORPTION-KINETICS FOR SIH2CL2 ON SI(111)7X7 [J].
COON, PA ;
GUPTA, P ;
WISE, ML ;
GEORGE, SM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1992, 10 (02) :324-333
[4]   ADSORPTION-KINETICS FOR ETHYLSILANE, DIETHYLSILANE, AND DIETHYLGERMANE ON SI(111) 7X7 [J].
COON, PA ;
WISE, ML ;
GEORGE, SM .
JOURNAL OF CHEMICAL PHYSICS, 1993, 98 (09) :7485-7495
[5]   DIETHYLSILANE ON SILICON SURFACES - ADSORPTION AND DECOMPOSITION KINETICS [J].
COON, PA ;
WISE, ML ;
DILLON, AC ;
ROBINSON, MB ;
GEORGE, SM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (01) :221-227
[6]   ADSORPTION AND DECOMPOSITION OF DIETHYLGERMANE ON SI(111) 7X7 [J].
COON, PA ;
WISE, ML ;
WALKER, ZH ;
GEORGE, SM ;
ROBERTS, DA .
APPLIED PHYSICS LETTERS, 1992, 60 (16) :2002-2004
[7]   DIETHYLSILANE DECOMPOSITION ON SILICON SURFACES STUDIED USING TRANSMISSION FTIR SPECTROSCOPY [J].
DILLON, AC ;
ROBINSON, MB ;
HAN, MY ;
GEORGE, SM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1992, 139 (02) :537-543
[8]  
DILLON AC, 1993, SURF SCI, V286, pL535, DOI 10.1016/0039-6028(93)90545-U
[9]   INFRARED PHOTOCHEMISTRY OF ALKYLSILANES AND ARYLSILANES [J].
FRANCISCO, JS ;
JOYCE, SA ;
STEINFELD, JI ;
WALSH, F .
JOURNAL OF PHYSICAL CHEMISTRY, 1984, 88 (14) :3098-3103
[10]   PHOTODISSOCIATION DYNAMICS OF ETHYLSILANE - ABINITIO AND RRKM STUDY [J].
FRANCISCO, JS ;
SCHLEGEL, HB .
JOURNAL OF CHEMICAL PHYSICS, 1988, 88 (06) :3736-3746