VALIDITY OF GRADUAL CHANNEL APPROXIMATION FOR JUNCTION FIELD-EFFECT TRANSISTORS WITH DRIFT VELOCITY SATURATION

被引：10

作者：

LEHOVEC, K

SEELEY, WG

机构：

[1] UNIV SO CALIF,DEPT ELECT ENGN & MAT SCI,UNIVERSITY PK,CA 90007

[2] N ADAMS STATE COLL,DEPT PHYS,N ADAMS,MA 01247

来源：

关键词：

D O I：

10.1016/0038-1101(73)90206-2

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1047 / 1054

页数：8

共 8 条

[1]

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LEHOVEC, K ;

ZULEEG, R .

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MAGOWAN, JA ;

RYAN, WD .

[6]

MO DL, 1970, PR INST ELECTR ELECT, V58, P1166, DOI 10.1109/PROC.1970.7884

[7] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[8] FIELD-DEPENDENT MOBILITY ANALYSIS OF FIELD-EFFECT TRANSISTOR [J].

TROFIMENKOFF, FN .

PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS, 1965, 53 (11) :1765-+