DIFFUSED JUNCTION P+-N SOLAR-CELLS IN BULK GAAS .1. FABRICATION AND CELL PERFORMANCE

被引：4

作者：

BHAT, I

BHAT, KN

MATHUR, G

BORREGO, JM

GHANDHI, SK

机构：

来源：

SOLID-STATE ELECTRONICS | 1984年 / 27卷 / 02期

关键词：

D O I：

10.1016/0038-1101(84)90102-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：121 / 125

页数：5

共 6 条

[1]

AUCOIN TR, 1979, SOLID STATE TECHNOL, P59

[2] AN OPEN-TUBE METHOD FOR DIFFUSION OF ZINC INTO GAAS [J].

FIELD, RJ ;

GHANDHI, SK .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (07) :1567-1570

[3] HIGH-PURITY SEMI-INSULATING GAAS MATERIAL FOR MONOLITHIC MICROWAVE INTEGRATED-CIRCUITS [J].

HOBGOOD, HM ;

ELDRIDGE, GW ;

BARRETT, DL ;

THOMAS, RN .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (02) :140-149

[4] DIFFUSED JUNCTION P+-N SOLAR-CELLS IN BULK GAAS .2. DEVICE CHARACTERIZATION AND MODELING [J].

KEENEY, R ;

SUNDARAM, LMG ;

RODE, H ;

BHAT, I ;

GHANDHI, SK ;

BORREGO, JM .

SOLID-STATE ELECTRONICS, 1984, 27 (02) :127-130

[5] HOLE DIFFUSION LENGTHS IN VPE GAAS AND GAAS0.6P0.4 TREATED WITH TRANSITION-METALS [J].

PARTIN, DL ;

MILNES, AG ;

VASSAMILLET, LF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (09) :1584-1588

[6]

WEISBERG LR, 1982, PHYS REV, V131, P1567

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