APPLICATION OF A MODIFIED COLLOID CHEMICAL SITE BINDING MODEL TO MOTT-SCHOTTKY PLOTS DETERMINED AT OXIDIC SEMICONDUCTOR ELECTROLYTE SYSTEMS

被引:9
作者
SMIT, W
机构
关键词
D O I
10.1149/1.2114311
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
引用
收藏
页码:2172 / 2175
页数:4
相关论文
共 28 条
[1]  
BEVINGTON PR, 1969, DATA REDUCTION ERROR, pCH11
[2]   ON THE IMPEDANCE OF THE SILICON DIOXIDE ELECTROLYTE INTERFACE [J].
BOUSSE, L ;
BERGVELD, P .
JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1983, 152 (1-2) :25-39
[3]   HYDROGEN CONCENTRATION GRADIENT AND ASSOCIATED ELECTRIC-FIELDS IN TIO2 PHOTO-ANODES [J].
CARLSSON, P ;
HOLMSTROM, B .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (08) :1851-1852
[4]   SURFACE IONIZATION AND COMPLEXATION AT OXIDE-WATER INTERFACE .1. COMPUTATION OF ELECTRICAL DOUBLE-LAYER PROPERTIES IN SIMPLE ELECTROLYTES [J].
DAVIS, JA ;
JAMES, RO ;
LECKIE, JO .
JOURNAL OF COLLOID AND INTERFACE SCIENCE, 1978, 63 (03) :480-499
[5]   INTERPRETATION OF MOTT-SCHOTTKY PLOTS DETERMINED AT SEMICONDUCTOR-ELECTROLYTE SYSTEMS [J].
DEGRYSE, R ;
GOMES, WP ;
CARDON, F ;
VENNIK, J .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1975, 122 (05) :711-712
[6]   THE CHARGE AND POTENTIAL DISTRIBUTIONS AT THE ZINC OXIDE ELECTRODE [J].
DEWALD, JF .
BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (03) :615-639
[7]   ELECTROCHEMICAL PROPERTIES OF SEMICONDUCTING TIO2 (RUTILE) SINGLE-CRYSTAL ELECTRODE [J].
DUTOIT, EC ;
CARDON, F ;
GOMES, WP .
BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1976, 80 (06) :475-481
[8]  
Gerischer H., 1970, PHYSICAL CHEMISTRY A, VIXA, P463
[9]  
HUNTER RJ, 1981, ZETA POTENTIAL COLLO, pCH7
[10]  
JAMES RO, 1978, J COLLOID INTERF SCI, V65, P311