ELECTRON-ENERGY LOSS SPECTRA OF IN/SI(111) SUPERSTRUCTURES
被引:14
作者:
HIRAYAMA, H
论文数: 0引用数: 0
h-index: 0
机构:Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn
HIRAYAMA, H
BABA, S
论文数: 0引用数: 0
h-index: 0
机构:Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn
BABA, S
KINBARA, A
论文数: 0引用数: 0
h-index: 0
机构:Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn
KINBARA, A
机构:
[1] Univ of Tokyo, Tokyo, Jpn, Univ of Tokyo, Tokyo, Jpn
来源:
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS
|
1986年
/
25卷
/
06期
关键词:
SILICON AND ALLOYS - SPECTROSCOPY;
ELECTRON;
-;
Applications;
D O I:
10.1143/JJAP.25.L452
中图分类号:
O59 [应用物理学];
学科分类号:
摘要:
Electron energy loss spectra (EELS) of Si(111) ROOT 3 multiplied by ROOT 3-In, Si(111)4 multiplied by 1-In superstructured surfaces were measured and compared with those of non-superstructured In/Si(111) surfaces. The shape of the loss spectrum of a superstructured surface is found to differ from that of a superstructured surface at coverages between 0. 3 and 0. 7 monolayers. The difference is discussed from the viewpoint of the surface electronic states.