THE ROLE OF THE LOW-TEMPERATURE BUFFER LAYER AND LAYER THICKNESS IN THE OPTIMIZATION OF OMVPE GROWTH OF GAN ON SAPPHIRE

In agreement with previous Work,(1,2) a thin, low temperature GaN buffer layer, that is used to initiate OMVPE growth of GaN growth on sapphire, is shown to play a critical role in determining the surface morphology of the main GaN epilayer. X-ray analysis shows that the mosaicity of the main GaN epilayer continues to improve even after several mu m of epitaxy. This continuing improvement in crystal perfection correlates with an improvement in Hall mobility for thicker samples. So far, we have obtained a maximum mobility of 600 cm(2)/V-s in a 6 mu m GaN epilayer. Atomic farce microscopy (AFM) analysis of the buffer layer and x-ray analysis of the main epilayer lead us to conclude that the both of these effects reflect the degree of coherence in the main GaN epitaxial layer. These results are consistent with the growth model presented by Hiramatsu et al., however, our AFM data indicates that for GaN buffer layers partial coherence can be achieved during the low temperature growth stage.