RESPECTIVE CONTRIBUTIONS OF THE FAST AND SLOW TRAPS TO CHARGE-PUMPING MEASUREMENTS

被引：8

作者：

BAUZA, D

GHIBAUDO, G

机构：

[1] Laboratoire de Physique des Composants à Semiconducteurs (URA CNRS 840), ENSERG, 38016 Grenoble, 23 rue des Martyrs

来源：

MICROELECTRONIC ENGINEERING | 1995年 / 28卷 / 1-4期

关键词：

D O I：

10.1016/0167-9317(95)00068-J

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

During the past years, a great attention has been focused on the characterisation of the ''fast'' interface traps. in this paper, we show that the contribution of the traps situated in the oxide at a tunneling distance from the semiconductor interface, i.e. the ''slow'' traps, induce a charge pumping current which can be of the same order of magnitude as that due to the fast ones. The characteristics of this current are discussed as well as the minimum achievable apparent interface trap density as function of the trap concentration in the oxide.

引用

页码：325 / 328

页数：4