SHALLOW IMPLANTS INTO GAAS

被引：8

作者：

GRAF, V

HEUBERGER, W

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80076-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：388 / 391

页数：4

共 12 条

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[2]

CHEN TH, 1985, IEEE T ELECTRON DEV, V32, P18, DOI 10.1109/T-ED.1985.21903

[3] IMPROVED SHORT-CHANNEL GAAS-MESFETS BY USE OF HIGHER DOPING CONCENTRATION [J].

DAEMBKES, H ;

BROCKERHOFF, W ;

HEIME, K ;

CAPPY, A .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1984, 31 (08) :1032-1037

[4] DYNAMIC PERFORMANCE OF SCHOTTKY-BARRIER FIELD-EFFECT TRANSISTORS [J].

DRANGEID, KE ;

SOMMERHA.R .

IBM JOURNAL OF RESEARCH AND DEVELOPMENT, 1970, 14 (02) :82-&

[5]

HARA T, 1979, SOLID STATE TECH, V23, P69

[6]

ISHII Y, 1985, 1984 P IEEE GALL ARS, P121

[7]

JAECKEL H, IN PRESS IEEE ELECTR

[8] IMPROVEMENT OF 5TH CONTROL FOR GAAS-FETS BY SHALLOW-CHANNEL ION-IMPLANTATION [J].

KASAHARA, J ;

ARAI, M ;

WATANABE, N .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1986, 33 (01) :28-33

[9]

KATO N, 1985, 17TH C SOL STAT DEV, P417

[10]

LINDHARD J, 1963, K DAN VIDENSK SELSK, V33

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