LOW-TEMPERATURE CHARACTERISTICS OF ION-IMPLANTED SILICON POSITION-SENSITIVE DETECTORS

被引：17

作者：

ELAD, E ^{[1
]}

SAREEN, R ^{[1
]}

机构：

[1] ORTEC INC, 100 MIDLAND RD, OAK RIDGE, TN 37830 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1974年 / NS21卷 / 01期

关键词：

D O I：

10.1109/TNS.1974.4327447

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：75 / 84

页数：10

共 21 条

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[8] ON BALLISTIC DEFICIT AND SIGNAL-TO-NOISE RATIO OF SEMICONDUCTOR SPECTROMETERS FOR ENERGY AND POSITION SPECTROSCOPY [J].

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[9] SI(LI) POSITION-SENSITIVE DETECTOR [J].

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NUCLEAR INSTRUMENTS & METHODS, 1973, 111 (02) :345-353

[10] X-RAY IMAGE DISSECTION USING A CHANNEL MULTIPLIER ARRAY [J].

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