RECOIL IMPLANTATION OF RADIOACTIVE TRANSITION-METALS AND THEIR INVESTIGATION IN SILICON BY DEEP-LEVEL TRANSIENT SPECTROSCOPY

被引：30

作者：

ACHTZIGER, N ^{[1
]}

GOTTSCHALK, H ^{[1
]}

LICHT, T ^{[1
]}

MEIER, J ^{[1
]}

RUB, M ^{[1
]}

REISLOHNER, U ^{[1
]}

WITTHUHN, W ^{[1
]}

机构：

[1] UNIV JENA,INST FESTKORPERPHYS,D-07443 JENA,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 18期

关键词：

D O I：

10.1063/1.113986

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Radioactive isotopes are produced by nuclear reactions in a thin target foil. The recoiling products are directly implanted into samples mounted off-axis to the primary beam. Using proton or α beams and appropriate target foils, radioactive isotopes of Ti, V, Cr, Mn, and Co were implanted. The implantation parameters are presented and compared with other implantation techniques for radioactive isotopes. To demonstrate an application, a deep-level transient spectroscopy measurement on 48V in silicon is presented. Ti and V correlated band-gap levels were observed during the 48V decay.© 1995 American Institute of Physics.

引用

页码：2370 / 2372

页数：3

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