ZN, TE AND SE DOPING OF LPE INGAPAS0.01 GROWN ON (100) GAAS SUBSTRATES

被引：15

作者：

MUKAI, S

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1982年 / 21卷 / 08期

关键词：

D O I：

10.1143/JJAP.21.1141

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1141 / 1148

页数：8

共 18 条

[1] THE IN-GA-AS-ZN SYSTEM - LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON (111) B INP SUBSTRATES [J].

BENCHIMOL, JL ;

QUILLEC, M ;

LECORNEC, C ;

LEROUX, G .

APPLIED PHYSICS LETTERS, 1980, 36 (06) :454-456

[2] RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J].

CUSANO, DA .

SOLID STATE COMMUNICATIONS, 1964, 2 (11) :353-358

[3] ELECTRICAL PROPERTIES OF N-TYPE GERMANIUM [J].

DEBYE, PP ;

CONWELL, EM .

PHYSICAL REVIEW, 1954, 93 (04) :693-706

[4] INFLUENCE OF GROWTH-SOLUTION DOPANTS ON DISTRIBUTION COEFFICIENTS IN THE LPE GROWTH OF INGAASP [J].

FENG, M ;

TASHIMA, MM ;

COOK, LW ;

MILANO, RA ;

STILLMAN, GE .

APPLIED PHYSICS LETTERS, 1979, 34 (01) :91-93

[5] GROWTH OF IN(1-X) GAXP P-N JUNCTIONS BY LIQUID PHASE EPITAXY [J].

HAKKI, BW .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (09) :1469-&

[6] LIQUID-PHASE EPITAXIAL-GROWTH AND PHOTOLUMINESCENCE CHARACTERIZATION OF LASER-QUALITY (100) IN1-XGAXP [J].

HITCHENS, WR ;

HOLONYAK, N ;

LEE, MH ;

CAMPBELL, JC .

JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :154-165

[7] ELECTRICAL-PROPERTIES OF ZN-DOPED IN1-XGAXP [J].

KATO, T ;

MATSUMOTO, T ;

ISHIDA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (12) :2367-2375

[8] ELECTROLUMINESCENCE AND PHOTOLUMINESCENCE OF GAAS - GE PREPARED BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

ETTENBERG, M .

APPLIED PHYSICS LETTERS, 1973, 23 (09) :511-513

[9] LUMINESCENCE FROM IN0.5GA0.5P PREPARED BY VAPOR-PHASE EPITAXY [J].

KRESSEL, H ;

NUESE, CJ ;

LADANY, I .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (07) :3266-3272

[10] OBSERVATIONS CONCERNING RADIATIVE EFFICIENCY AND DEEP-LEVEL LUMINESCENCE IN N-TYPE GAAS PREPARED BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

HAWRYLO, FZ ;

ABRAHAMS, MS ;

BUIOCCHI, CJ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (11) :5139-&

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