AMORPHOUS CRYSTALLINE TRANSFORMATION AND CONDUCTIVITY ENHANCEMENT IN ANNEALED BISMUTH SULFIDE THIN-FILMS

被引：22

作者：

NAIR, PK

CAMPOS, J

SANCHEZ, A

BANOS, L

NAIR, MTS

机构：

[1] Lab. de Energia Solar, Univ. Nacional Autonoma de Mexico, Mexico City

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1991年 / 6卷 / 05期

关键词：

D O I：

10.1088/0268-1242/6/5/014

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Post-deposition vacuum annealing of chemically deposited Bi2S3 thin films has been found to enhance the dark conductivity of the films from congruent-to 10(-7) OMEGA-1 cm-1 to congruent-to 10(2) OMEGA-1 cm-1 and the photoconductivity from approximately 10(-5) OMEGA-1 cm-1 to congruent-to 10(2) OMEGA-1 cm-1. Such increase is attributed to (i) an amorphous-to-crystalline transformation of the films setting in at congruent-to 175-degrees-C, confirmed by x-ray diffraction studies and (ii) loss of sulphur from the film during vacuum annealing at temperatures > 200-degrees-C, confirmed by the absence of this effect in air/nitrogen annealing. In the case of annealing in air, the competing effect of mobility enhancement by amorphous-crystalline transformation and mobility depreciation by oxygen chemisorption at the intergrain region is seen to contribute to a dark conductivity and photoconductivity maxima at an annealing temperature of congruent-to 200-degrees-C.

引用

页码：393 / 396

页数：4

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