FORMATION OF CUXS FILMS THROUGH A CHEMICAL BATH DEPOSITION PROCESS

被引：74

作者：

GADAVE, KM

LOKHANDE, CD

机构：

来源：

THIN SOLID FILMS | 1993年 / 229卷 / 01期

关键词：

D O I：

10.1016/0040-6090(93)90397-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A method for the preparation of Cu(x)S thin films through chemical bath deposition from a thiosulphate acidic bath is described. From optical absorption studies, the band gap of Cu(x)S is estimated to be 2.40 eV. The electrical resistivity was of the order of 10(-4) OMEGA CM. IR and SEM studies were carried out.

引用

页码：1 / 4

页数：4

共 14 条

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