EQUIVALENT-CIRCUIT MODEL IN GRAIN-BOUNDARY BARRIER LAYER CAPACITORS

被引：64

作者：

CHIOU, BS

LIN, ST

DUH, JG

CHANG, PH

机构：

[1] NATL TSING HUA UNIV,DEPT MAT SCI & ENGN,HSINCHU 300,TAIWAN

[2] TEXAS INSTRUMENTS INC,CENT RES LAB,DALLAS,TX 75265

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1989年 / 72卷 / 10期

关键词：

D O I：

10.1111/j.1151-2916.1989.tb06008.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1967 / 1975

页数：9

共 23 条

[1]

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[2]

BRAUER H, 1971, Patent No. 3569802

[3] THE EFFECT OF SINTERING CONDITIONS ON THE GRAIN-GROWTH OF THE BATIO3-BASED GBBL CAPACITORS [J].

CHIOU, BS ;

LIN, ST ;

DUH, JG .

JOURNAL OF MATERIALS SCIENCE, 1988, 23 (11) :3889-3893

[4] GRAIN-BOUNDARY PHASES IN A HOT-PRESSED MGO FLUXED SILICON-NITRIDE [J].

CLARKE, DR ;

THOMAS, G .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1977, 60 (11-1) :491-495

[5] INHIBITION OF REDUCTION OF BATIO3 [J].

DESU, SB ;

SUBBARAO, EC .

JOURNAL OF MATERIALS SCIENCE, 1980, 15 (08) :2113-2115

[6]

GLAISTER RM, 1960, Patent No. 849938

[7]

GOODMAN G, 1981, ADV CERAM, V1, P215

[8] TRANSMISSION ELECTRON-MICROSCOPY AT GRAIN-BOUNDARIES OF PTC-TYPE BATIO3 CERAMICS [J].

HAANSTRA, HB ;

IHRIG, H .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1980, 63 (5-6) :288-291

[9]

Jaffe B., 1971, PIEZOELECTRIC CERAMI, P70

[10]

KINGERY WD, 1976, FERROELECTRIC CERAMI, P964

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