ACTIVE AREA LIMITATION OF GE-GAAS HETEROJUNCTIONS BY MEANS OF B-ION IMPLANTATION

被引：9

作者：

ISHIZUKA, F

SUGIOKA, K

ITOH, T

机构：

来源：

JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 02期

关键词：

D O I：

10.1063/1.336659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：495 / 498

页数：4

共 15 条

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