MAGNETORESISTANCE OF N-INSB IN WEAKLY LOCALIZED REGIME

被引：40

作者：

ISAWA, Y

HOSHINO, K

FUKUYAMA, H

机构：

[1] NIIGATA UNIV,FAC ENGN,NIIGATA 95021,JAPAN

[2] UNIV TOKYO,INST SOLID STATE PHYS,MINATO KU,TOKYO 106,JAPAN

来源：

JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN | 1982年 / 51卷 / 10期

关键词：

D O I：

10.1143/JPSJ.51.3262

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：3262 / 3273

页数：12

共 39 条

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