INTENSE SOURCE OF MONOCHROMATIC ELECTRONS - PHOTOEMISSION FROM GAAS

[1] AVERY N, 1982, ELECTRON ENERGY LOSS

[2] BALLU Y, 1980, ADV ELECTRONICS E SB, V13

[3] BELL RL, 1973, NEGATIVE ELECTRON AF

[4] SPIN-POLARIZED PHOTO-ELECTRON EMISSION STUDY OF ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4395 - 4398

[5] CONRATH C, 1979, APPL PHYS, V20, P155

[6] DEMUTH JE, 1982, ELECTRON ENERGY LOSS

[7] PHOTOELECTRON ENERGY-DISTRIBUTION AND SPIN POLARIZATION FROM ACTIVATED GALLIUM-ARSENIDE [J]. JOURNAL DE PHYSIQUE LETTRES, 1983, 44 (24): : 1027 - 1034

[8] HAAS GA, 1967, METHODS EXPT PHYSI A, V4

[9] Ibach H., 1982, ELECTRON ENERGY LOSS

[10] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J]. PHYSICAL REVIEW, 1969, 183 (03): : 740 - &

[1] AVERY N, 1982, ELECTRON ENERGY LOSS

[2] BALLU Y, 1980, ADV ELECTRONICS E SB, V13

[3] BELL RL, 1973, NEGATIVE ELECTRON AF

[4] SPIN-POLARIZED PHOTO-ELECTRON EMISSION STUDY OF ALXGA1-XAS ALLOYS GROWN BY MOLECULAR-BEAM EPITAXY [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (06) : 4395 - 4398

[5] CONRATH C, 1979, APPL PHYS, V20, P155

[6] DEMUTH JE, 1982, ELECTRON ENERGY LOSS

[7] PHOTOELECTRON ENERGY-DISTRIBUTION AND SPIN POLARIZATION FROM ACTIVATED GALLIUM-ARSENIDE [J]. JOURNAL DE PHYSIQUE LETTRES, 1983, 44 (24): : 1027 - 1034

[8] HAAS GA, 1967, METHODS EXPT PHYSI A, V4

[9] Ibach H., 1982, ELECTRON ENERGY LOSS

[10] TRANSPORT PROPERTIES OF GAAS OBTAINED FROM PHOTOEMISSION MEASUREMENTS [J]. PHYSICAL REVIEW, 1969, 183 (03): : 740 - &