FAILURE ANALYSIS OF POWER MODULES - A LOOK AT THE PACKAGING AND RELIABILITY OF LARGE IGBTS

被引：40

作者：

DELAMBILLY, H

KESER, HO

机构：

[1] Corporate Research Center, ASEA BROWN BOVERI, Baden

来源：

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY | 1993年 / 16卷 / 04期

关键词：

D O I：

10.1109/33.237930

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Processing yield limits today's MOS power chip sizes to a few square centimeters. This introduced a new family of power modules made of several paralleled chips. In this paper, the reliability of such assemblies will be checked with power cycling tests and the inhomogeneities in temperature inside the module presented.

引用

页码：412 / 417

页数：6

共 13 条

[1]

AUGUSTIN KH, 1991, Patent No. 3941814

[2]

BAYERER R, 1991, P PCIM 91 C

[3] SOLDER FATIGUE PROBLEMS IN POWER PACKAGES [J].

BURGESS, JF ;

CARLSON, RO ;

GLASCOCK, HH ;

NEUGEBAUER, CA ;

WEBSTER, HF .

IEEE TRANSACTIONS ON COMPONENTS HYBRIDS AND MANUFACTURING TECHNOLOGY, 1984, 7 (04) :405-410

[4]

KANG SK, 1977, IEEE T PARTS HYB PAC, V13, P318, DOI 10.1109/TPHP.1977.1135203

[5]

Lorenz L., 1990, Actuator 90. Proceedings of 2nd International Technology-Transfer Congress, P103

[6] RELIABILITY OF SILICON POWER TRANSISTORS [J].

MARMANN, A .

MICROELECTRONICS AND RELIABILITY, 1976, 15 (01) :69-74

[7]

NEUGEBAUER CA, 1986, PACKAGING POWER SEMI, P37

[8]

PAUTRIEUX J, 1992, P PCIM 92 C, P69

[9]

PETTERTEIG A, 1991, P EPE MADEP C

[10]

Pote D., 1988, P INT S TESTING FAIL, P63

← 1 2 →