CHANGE OF ELECTRONIC-PROPERTIES ON THE DOPING-INDUCED INSULATOR-METAL TRANSITION IN LA1-XSRXVO3

Changes in electrical, magnetic, and optical properties have been investigated for the doping-induced insulator-metal (I-M) transition in hole-doped Mott insulators, La1-xSrxVO3. In the optical spectra, the I-M transition is characterized by doping-induced transfer of spectral weight into the in-gap region. Resistivity in the metallic phase near the critical magnetic phase boundary shows such a temperature dependence as expressed by the relation rho=rho(0)+AT(1.5) over a wide temperature range (2-200 K) with the enhanced coefficient A towards the phase boundary. The results are argued in terms of effect of the antiferromagnetic spin fluctuation on the charge transport.