EPITAXIAL BATIO3 MGO STRUCTURE GROWN ON GAAS(100) BY PULSED-LASER DEPOSITION

被引：53

作者：

NASHIMOTO, K ^{[1
]}

FORK, DK ^{[1
]}

PONCE, FA ^{[1
]}

TRAMONTANA, JC ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 9B期

关键词：

EPITAXIAL BATIO3; BUFFER MGO; GAAS SUBSTRATE; THIN FILM; MICROSTRUCTURE; HYSTERESIS; PULSED LASER DEPOSITION;

D O I：

10.1143/JJAP.32.4099

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

BaTiO3 thin films on MgO encapsulated GaAs(100) were prepared epitaxially, in condition ranging from 600-degrees-C to 800-degrees-C and from 2 x 10(-4) Torr O2 to 1 X 10(-2) Torr O2, by pulsed laser deposition. The epitaxial relationship between all materials was cube-on-cube. BaTiO3 thin films obtained were c axis oriented tetragonal phase and showed ferroelectric properties. EpitaXial BaTiO3 had quite smooth surface of less than 100 angstrom in roughness. BaTiO3 grown on 40-angstrom-thick epitaxial MgO was also epitaxial although defect density in BaTiO3 looked higher than that in BaTiO3 grown on 400-angstrom-thick MgO. The interfaces of BaTiO3/40-angstrom-thick MgO/GaAs structure were abrupt and free of secondary phases in spite of the quite thin MgO layer.

引用

页码：4099 / 4102

页数：4

共 20 条

[1]

Adachi H., 1983, Japanese Journal of Applied Physics, Supplement, V22, P11

[2]

BURFOOT JC, 1979, POLAR DIELECTRICS TH, P257

[3] EPITAXIAL-GROWTH OF THIN-FILMS OF BATIO3 USING EXCIMER LASER ABLATION [J].