DETERMINATION OF SEMICONDUCTOR PARAMETERS AND OF THE VERTICAL STRUCTURE OF DEVICES BY NUMERICAL-ANALYSIS OF ENERGY-DEPENDENT EBIC MEASUREMENTS

被引：39

作者：

KITTLER, M

SCHRODER, KW

机构：

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 77卷 / 01期

关键词：

D O I：

10.1002/pssa.2210770117

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

收藏

页码：139 / 151

页数：13

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共 32 条

[1] BALK LJ, 1977, 8 INT C XRAY OPT MIC
[2] THEORY OF LIFE TIME MEASUREMENTS WITH SCANNING ELECTRON-MICROSCOPE - STEADY-STATE
BERZ, F
KUIKEN, HK
[J]. SOLID-STATE ELECTRONICS, 1976, 19 (06) : 437 - 445
[3] BISHOP HE, 1966, THESIS CAMBRIDGE
[4] COMBINED SCANNING (EBIC) AND TRANSMISSION ELECTRON-MICROSCOPIC INVESTIGATIONS OF DISLOCATIONS IN SEMICONDUCTORS
BLUMTRITT, H
GLEICHMANN, R
HEYDENREICH, J
JOHANSEN, H
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1979, 55 (02): : 611 - 620
[5] DETERMINATION OF DOPANT-CONCENTRATION DIFFUSION LENGTH AND LIFETIME VARIATIONS IN SILICON BY SCANNING ELECTRON-MICROSCOPY
CHI, JY
GATOS, HC
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (05) : 3433 - 3440
[6] AN ANALYTICAL MODEL OF SEM AND STEM CHARGE COLLECTION IMAGES OF DISLOCATIONS IN THIN SEMICONDUCTOR LAYERS .1. MINORITY-CARRIER GENERATION, DIFFUSION, AND COLLECTION
DONOLATO, C
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1981, 65 (02): : 649 - 658
[7] DETERMINATION OF KILOVOLT ELECTRON ENERGY DISSIPATION VS PENETRATION DISTANCE IN SOLID MATERIALS
EVERHART, TE
HOFF, PH
[J]. JOURNAL OF APPLIED PHYSICS, 1971, 42 (13) : 5837 - &
[8] GEORGES A, 1980, SCANNING ELECTRON MI, V4, P69
[9] HIGUCHI H, 1965, JAPAN J APPL PHYS, V4, P361
[10] HUNTER DR, 1973, SCANNING ELECTRON MI, P208

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