RAMAN MODES OF 6H POLYTYPE OF SILICON-CARBIDE TO ULTRAHIGH PRESSURES - A COMPARISON WITH SILICON AND DIAMOND

被引：124

作者：

LIU, J

VOHRA, YK

机构：

[1] Department of Physics, University of Alabama at Birmingham, Birmingham

来源：

PHYSICAL REVIEW LETTERS | 1994年 / 72卷 / 26期

关键词：

D O I：

10.1103/PhysRevLett.72.4105

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

We report the Raman study on 6H-SiC to ultrahigh pressures of 95 GPa in a diamond anvil cell. The LO(GAMMA) and TO(GAMMA) Raman frequencies increase with increasing pressures. A very interesting turnaround in the LO-TO splitting is observed above 60 GPa. The density variation of the mode Gruneisen parameters for 6H-SiC is compared to that of silicon, cubic boron nitride, and diamond. The SiC is transparent to the visible light at 95 GPa and the anticipated metallic phase was not observed.

引用

页码：4105 / 4108

页数：4

共 23 条

[1]

ADDAMIANO A, 1974, SILICON CARBIDE 1973, P179

[2]

Aleksandrov I., 1992, HIGH PRESSURE RES AP, P409

[3]

ALEKSANDROV IV, 1987, ZH EKSP TEOR FIZ, V66, P384

[4]

[Anonymous], ELECTRONIC STRUCTURE